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Photos
Introduction
elixir®
was born in November 2001. elixir® branded chip
is manufactured by worldwide major DRAM supplier
with leading technologies, provides you full range
of unbuffered memory modules ranging from 128MB,
256MB to 512MB, is the most cost effective choice
for memory products. elixir® helps you effectively
upgrade desktop memory capacity to increase computer
performance.
M2Y25664TUH4B0F,
M2Y51264TU88B0B, and M2Y1G64TU8HB0B are 240-Pin
Double Data Rate 2 (DDR2) Synchronous DRAM Unbuffered
Dual In-Line Memory Module (UDIMM), organized as
one-rank 32Mx64 and 64Mx64 and two ranks 128Mx64
high-speed memory array. NT256T64UH4B0FY use four
32Mx16 DDR2 SDRAMs. NT512T64U88B0BY use eight 64Mx8
DDR2 SDRAMs. NT1GT64U8HB0BY use sixteen 64Mx8 DDR2
SDRAMs. These DIMMs are manufactured using raw cards
developed for broad industry use as reference designs.
The use of these common design files minimizes electrical
variation between suppliers. All Elixir DDR2 SDRAM
DIMMs provide a high-performance, flexible 8-byte
interface in a 5.25” long space-saving footprint.
The
DIMM is intended for use in applications operating
up to 233 MHz (333MHz and 400MHz) clock speeds and
achieves high-speed data transfer rates of up to
533MHz (667MHz and 800MHz). Prior to any access
operation, the device latency and burst / length
/ operation type must be programmed into the DIMM
by address inputs A0-A14 and I/O inputs BA0 and
BA1 using the mode register set cycle. The DIMM
uses serial presence-detect implemented via a serial
2,048-bit EEPROM using a standard IIC protocol.
The first 128 bytes of serial PD data are programmed
and locked during module assembly. The remaining
128 bytes are available for use by the customer.
Features
- JEDEC
Standard 240-pin Dual In-Line Memory Module
- 32Mx64
DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM
B die
- 64Mx64
and 128Mx64 DDR2 Unbuffered DIMM based on 64Mx8
DDR2 SDRAM B die
- Intended
for 266MHz, 333MHz, and 400MHz applications
- Inputs
and outputs are SSTL-18 compatible
- VDD
= VDDQ = 1.8Volt ± 0.1
- SDRAMs
have 4 internal banks for concurrent operation
- Differential
clock inputs
- Data
is read or written on both clock edges
- Bi-directional
data strobe with one clock cycle preamble and
one-half clock post-amble
- Address
and control signals are fully synchronous to positive
clock edge
- Programmable
Operation:
-
Burst Type: Sequential or Interleave
- Burst Length: 4, 8
- Operation: Burst Read and Write
- Auto
Refresh (CBR) and Self Refresh Modes
- Automatic
and controlled precharge commands
- 13/10/1
Addressing (row/column/rank) – 256MB
- 14/10/1
Addressing (row/column/rank) – 512MB
- 14/10/2
Addressing (row/column/rank) – 1GB
- 7.8
ìs Max. Average Periodic Refresh Interval
- Serial
Presence Detect
- Gold
contacts
- SDRAMs
in 60 and 84 ball BGA Package
- RoHS
compliance
Specifications
-
Part Number: M2Y51264TU88B0B -25C
- Organization:
64Mx64
- Speed:
400MHz (2.50ns@ CL = 5)
- Latency:
5
- Power:
1.8V
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