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Introduction

elixir® was born in November 2001. elixir® branded chip is manufactured by worldwide major DRAM supplier with leading technologies, provides you full range of unbuffered memory modules ranging from 128MB, 256MB to 512MB, is the most cost effective choice for memory products. elixir® helps you effectively upgrade desktop memory capacity to increase computer performance.

M2U1G64DS8HC1G and M2Y1G64DS8HC1G are unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM) and organized as two ranks of 64Mbx64 high-speed memory array using sixteen 64Mx8 DDR SDRAMs TSOP packages. M2U51264DS88C1G and M2Y51264DS88C1G are unbuffered 184-Pin DDR Synchronous DRAM UDIMM and organized as a single rank of 64Mbx64 high-speed memory array using eight 64Mx8 DDR SDRAMs TSOP packages.

Depending on the speed grade, these UDIMMs are intended for use in applications operating up to 200 MHz clock speeds and achieves high-speed data transfer rates of up to 400 MHz. Prior to any access operation, the device latency and burst type/ length/operation type must be programmed into the DIMM by address inputs and I/O inputs BA0 and BA1 using the mode register set cycle. The DIMM uses a serial EEPROM and through the use of a standard IIC protocol the serial presence-detect implementation (SPD) can be accessed. The first 128 bytes of the SPD data are programmed with the module characteristics as defined by JEDEC.

Features

• 184 Dual In-Line Memory Module (DIMM)
  
• Unbuffered DDR DIMM based on 90nm 512M bit die C device
• Intended for 166 MHz and 200 MHz applications
  
• Inputs and outputs are SSTL-2 compatible
  
• VDD = VDDQ = 2.5V ± 0.2V (6K); VDD = VDDQ = 2.6V ± 0.1V (5T)
  
• SDRAMs have 4 internal banks for concurrent operation
  
• Differential clock inputs
  
• Data is read or written on both clock edges
  
• DRAM DLL aligns DQ and DQS transitions with clock transitions
• Address and control signals are fully synchronous to positive lock edge
  
• Programmable Operation:
  - DIMM Latency: 2.5 (6K); 3 (5T)
  - Burst Type: Sequential or Interleave
  - Burst Length: 2, 4, 8
  - Operation: Burst Read and Write
  
• Auto Refresh (CBR) and Self Refresh Modes
  
• Automatic and controlled precharge commands
  
• 7.8 ms Max. Average Periodic Refresh Interval
  
• Serial Presence Detect EEPROM
  
• Gold contacts on module PCB
  
• RoHS compliance
  - M2Y1G64DS8HC1G
  - M2Y51264DS88C1G
  

Specifications

• Part Number: M2Y1G64DS8HC1G-5T
  
• Organization: 128Mx64
  
• Speed: 3-3-3, 200MHz (5ns @ CL = 3)
  
• Power: 2.6V